| PART |
Description |
Maker |
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Ramtron International Corporation
|
| MC68450 |
Direct Memory Access Controller
|
Motorola, Inc
|
| SI3016 |
3.3 V ENHANCED GLOBAL DIRECT ACCESS ARRANGEMENT
|
ETC[ETC]
|
| HD68450Y-6 HD68450Y-10 HD68450Y-8 HD68450Y-4 HD684 |
Direct Memory Access Controller(NMOS)
|
Hitachi Semiconductor
|
| SI3016-F-FS |
3.3 V ENHANCED GLOBAL DIRECT ACCESS ARRANGEMENT SPECIALTY CONSUMER CIRCUIT, PDSO16
|
Silicon Laboratories, Inc.
|
| IW-SM2144SMT |
Station or Access Point - Switchable Miniature embedded secure 802.11b/g/n WiFi SMT module
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Premier Magnetics, Inc.
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RF Monolithics, Inc
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